Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

• Adrian Iovan,
• Marco Fischer,
• Roberto Lo Conte and
• Vladislav Korenivski

Beilstein J. Nanotechnol. 2012, 3, 884–892, doi:10.3762/bjnano.3.98

• materials with relatively short characteristic relaxation lengths. Keywords: magnetic point contact arrays; spin laser; sub-10 nm colloidal lithography; Introduction Colloidal lithography [1] is a method to reproduce patterns in a variety of natural systems and is used more and more as an efficient

• nontrivial task for any patterning technique (see Introduction) and, to our knowledge, has not been demonstrated to date. For the spin-laser device of [15], for example, the bottom electrode must be thick to serve as an efficient electron and phonon bath under high-current injection. We take that into